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Applied Science and Convergence Technology 2011; 20(4): 271-275

Published online July 1, 2011

Copyright © The Korean Vacuum Society.

Enhanced Hole Concentration of p-GaN by Sb Surfactant

J. Y. Kim , S. J. Park , Y. B. Moon , M. K. Kwon


The role and effect of Sb surfactant on structure and properties of p type gallium nitride (GaN) epilayers have been investigated. It was found that there was a increase of hole concentration with Sb surfactant, compared to typical Mg-doped p-GaN. The structural and optical quality of p-GaN epilayers were accessed by x-ray diffraction, photoluminescence and atomic force microscope measurements. The results clearly show that the increase in hole concentration with Sb surfactant can be resulted from decrease in the dislocations and nitrogen point defects.

Keywords: GaN,질화갈륨,Light emitting diode,p형,Ⅲ-Ⅴ,화합물 반도체,Surfactant,Metal organic chemical vapor deposition,p-GaN,Gallium nitride,Compound semiconductor

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