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Applied Science and Convergence Technology 2011; 20(5): 345-355

Published online September 30, 2011

Copyright © The Korean Vacuum Society.

Simulation Study on the DC/RF Characteristics of MHEMTs

Myung-Sik Son


GaAs-based metamorphic high electron mobility transistors (MHEMTs) and InP-based high electron mobility transistors (HEMTs) have good microwave and millimeter-wave frequency performance with lower minimum noise figure. MHEMTs have some advantages, especially for cost, compared with InP-based ones. In this paper, InAlAs/InxGa1-xAs/GaAs MHEMTs are simulated for DC/RF small-signal analysis. The hydrodynamic simulation parameters are calibrated to a fabricated 0.1-㎛ Γ-gate MHEMT device having the modulation-doped In0.52Al0.48As/In0.53Ga0.47As heterostructure on the GaAs substrate, and the simulations for RF small-signal characteristics are performed, compared with the measured data, and analyzed for the devices. In addition, the simulations for the DC/RF characteristics of the MHEMTs with different gate-recess structures are performed, compared and analyzed.

Keywords: 고전자이동도 트랜지스터(HEMT),메타몰픽 HEMT (MHEMT),InGaAs,InAlAs,소자 시뮬레이션,RF,소신호,차단주파수,최대공진주파수,High electron mobility transistor(HEMT),Metamorphic high electron mobility transistor(MHEMT),InGaAs,InAlAs,Device simulation,Small signal,Cutoff frequency,Maximum oscillation

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