GaAs-based metamorphic high electron mobility transistors (MHEMTs) and InP-based high electron mobility transistors (HEMTs) have good microwave and millimeter-wave frequency performance with lower minimum noise figure. MHEMTs have some advantages, especially for cost, compared with InP-based ones. In this paper, InAlAs/InxGa1-xAs/GaAs MHEMTs are simulated for DC/RF small-signal analysis. The hydrodynamic simulation parameters are calibrated to a fabricated 0.1-㎛ Γ-gate MHEMT device having the modulation-doped In_0.52Al_0.48As/In_0.53Ga_0.47As heterostructure on the GaAs substrate, and the simulations for RF small-signal characteristics are performed, compared with the measured data, and analyzed for the devices. In addition, the simulations for the DC/RF characteristics of the MHEMTs with different gate-recess structures are performed, compared and analyzed.

Keywords: 고전자이동도 트랜지스터(HEMT),메타몰픽 HEMT (MHEMT),InGaAs,InAlAs,소자 시뮬레이션,RF,소신호,차단주파수,최대공진주파수,High electron mobility transistor(HEMT),Metamorphic high electron mobility transistor(MHEMT),InGaAs,InAlAs,Device simulation,Small signal,Cutoff frequency,Maximum oscillation