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Applied Science and Convergence Technology 2013; 22(2): 92-97

Published online March 1, 2013

Copyright © The Korean Vacuum Society.

Luminescence Properties of InAs/GaAs Quantum Dots Grown by MEE Method

Jae Won Oh , Hye Ryoung Byun , Mee-Yi Ryu , Jin Dong Song

Abstract

The luminescence properties of InAs/GaAs quantum dots (QDs) grown by a migration enhanced epitaxy method have been investigated by using photoluminescence (PL) and time-resolved PL measurements. The MEE method supplies materials in a series of alternate depositions with migration enhancing time between each deposition. After In source was supplied for 9.3 s, the growth was interrupted for 5 s. Subsequently, As source was open for 3 (AT3), 4(AT4), 6 (AT6), or 9 s (AT9), and the growth was interrupted for 5 s again. This growth sequence was repeated 3 times for the growth of InAs QDs. The PL peak of the AT3 was 1,140 nm and the PL intensity was very weak compared with that of the other three samples. The PL peak of all samples except the AT3 sample was 1,118 nm, which is blueshifted from 1,140 nm, and the PL intensity was increased compared to that of the AT3. These results can be explained by the increased QD density and the improved QD uniformity. The AT6 sample showed the strongest PL intensity and the narrowest full width at half maximum. The PL decay time of AT6 increased with increasing emission wavelength from 940 to 1,126 nm, reaching a maximum decay time of 1.09 ns at 1,126 nm, and then decreased as the emission wavelength was increased further.

Keywords: InAs,양자점,포토루미네션스,시간분해 포토루미네션스,InAs,Quantum dots,Photoluminescence,Time-resolved photoluminescence

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