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Research Paper

Applied Science and Convergence Technology 2017; 26(3): 47-49

Published online May 31, 2017


Copyright © The Korean Vacuum Society.

Enhanced Photosensitivity in Monolayer MoS2 with PbS Quantum Dots

Sangeun Choa , Yongcheol Joa , Hyeonseok Wooa , Jongmin Kima , Jungwon Kwakb , Hyungsang Kima , and Hyunsik Ima , *

aDivision of Physics & Semiconductor Science, Dongguk University, Seoul 04620, South Korea, bMedical Physics Department, Asan Medical Center, Seoul 05505, South Korea

Correspondence to:E-mail: hyunsik7@dongguk.edu

Received: March 28, 2017; Revised: April 27, 2017; Accepted: April 27, 2017

This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.


Photocurrent enhancement has been investigated in monolayer (1L) MoS2 with PbS quantum dots (QDs). A metal-semiconductor-metal (Au-1L MoS2-Au) junction device is fabricated using a standard photolithography method. Considerably improved photo-electrical properties are obtained by coating PbS QDs on the Au-1L MoS2-Au device. Time dependent photoconductivity and current-voltage characteristics are investigated. For the QDs-coated MoS2 device, it is observed that the photocurrent is considerably enhanced and the decay life time becomes longer. We propose that carriers in QDs are excited and transferred to the MoS2 channel under light illumination, improving the photocurrent of the 1L MoS2 channel. Our experimental findings suggest that two-dimensional layered semiconductor materials combined with QDs could be used as building blocks for highly-sensitive optoelectronic detectors including radiation sensors.

Keywords: Photodetector, Molybdenum disulfide, PbS quantum dot

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