Applied Science and Convergence Technology 2017; 26(4): 55-61
Published online July 31, 2017
Copyright © The Korean Vacuum Society.
Youngeun Naa , Jaehyun Hanb , c , and Jong-Souk Yeoa , b , c , *
aIntegrated Science and Engineering Division, Yonsei University, 162-1 Songdo-dong, Yeonsu-gu, Incheon 406-840, Republic of Korea, bSchool of Integrated Technology, Yonsei University, 162-1 Songdo-dong, Yeonsu-gu, Incheon 406-840, Republic of Korea, cYonsei Institute of Convergence Technology, Yonsei University, 162-1 Songdo-dong, Yeonsu-gu, Incheon 406-840, Republic of Korea
Correspondence to:E-mail: firstname.lastname@example.org
This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Graphene, with a carrier mobility achieving up to 140,000 cm2/Vs at room temperature, makes it an ideal material for application in semiconductor devices. However, when the metal comes in contact with the graphene sheet, an energy barrier forms at the metal-graphene interface, resulting in a drastic reduction of the carrier mobility of graphene. In this review, the various methods of forming metal-graphene covalent contacts to lower the contact resistance are discussed. Furthermore, the graphene sheet in the area of metal contact can be cut in certain patterns, also discussed in this review, which provides a more efficient approach to forming covalent contacts, ultimately reducing the contact resistance for the realization of high-performance graphene devices.
Keywords: Graphene, Carrier mobility, Contact resistance, Covalent contacts, Patterning