Transition metal dichalcogenides with two-dimensional ultrathin film-type structures are suitable for applications in semiconductor devices owing to the presence of a direct band gap. Among these materials, tungsten ditelluride (WTe₂) and molybdenum ditelluride (MoTe₂) have potential applications in optical and electrical devices as they easily control the phase and exhibit unique electrical transport characteristics. In this study, 1T′-phase few-layers MoTe₂ thin films were grown on a silicon dioxide/silicon substrate using a metal organic chemical vapor deposition system; the phase of the grown MoTe₂ thin film was analyzed using Raman spectroscopy and few-layers MoTe₂ were observed using atomic force microscopy. A high-performance photodetector and field effect transistor were fabricated and used to analyze the photocurrent density and electrical characteristics of the thin films. On comparing the current of the laser with and without illumination for a photodetector based on the 1T′ phase, the results indicated a significant increase in the photocurrent under illumination. This indicates the strong dependence of the few-layers MoTe₂ thin film on laser power. Thus, the 1T′-phase few-layers MoTe₂ thin film with a high photocurrent density and excellent electrical transport characteristics is considered a promising material for high-performance photodetectors.

Keywords: 1T´-phase, Photodetector, MoTe₂, Metal organic chemical vapor deposition, Field effect transistor