Applied Science and Convergence Technology 2020; 29(3): 41-49
Published online May 30, 2020
Copyright © The Korean Vacuum Society.
Doo San Kima, Ju Eun Kima, You Jung Gilla, Yun Jong Janga, Ye Eun Kima, Kyong Nam Kimb, Geun Young Yeoma,c, and Dong Woo Kima,*
aSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
bSchool of Advanced Materials Science and Engineering, Daejeon University, Daejeon 34520, Republic of Korea
cSKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
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To determine a suitable etching method for the fabrication of semiconductors with a few nm or less thickness, many atomic layer etching (ALE) techniques have been studied. Previously, ALE studies on silicon-based materials have been reported; however, recently, the number of ALE studies on metals have also been increasing. Metals are applied to semiconductor devices as electrodes and hard mask materials, thus, there is an increasing need for precise etching using ALE techniques. Therefore, in this brief review, recently reported ALE studies on metals will be summarized, and the ALE process results for various metals will be described for two ALE methods, namely, anisotropic ALE and isotropic ALE.
Keywords: Atomic layer etching, Metal, Anisotropic, Isotropic, Precise etch, Low damage