Inductively coupled plasma can produce high density plasma at a lower pressure than capacitively coupled plasma and is widely used in semiconductor manufacturing processes. This study investigated the characteristics of argon plasma produced through inductive coupling at low pressures. This simulation study assumed a 2D axisymmetric fluid-based model. The modeling of neutral and ions was performed by applying heat transfer and gas flow physics, which resulted in improved simulation accuracy. Convergence of results was obtained when ion temperature and mobility at pressures ≤ 10 mTorr were included in the plasma analysis. The results of the plasma model based on the Maxwellian, Druyvesteyn, and Boltzmann electron energy distribution functions were compared. In addition, the correlations between plasma parameters under various pressure levels were evaluated. This study could help in understanding the physical plasma discharge phenomenon and deriving optimum process parameters and conditions for semiconductor processes.

Keywords: Inductively coupled plasma, Electron energy distribution function, Fluid simulation