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Research Paper

Applied Science and Convergence Technology 2020; 29(6): 180-182

Published online November 30, 2020


Copyright © The Korean Vacuum Society.

Position Dependent Resistance and Doping Condition on a Graphene Flake

Oh Hun Gwona , Jong Yun Kimb , Seok-Ju Kangb , and Young-Jun Yua , b , *

aDepartment of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
bInstitute of Quantum Systems, Chungnam National University, Daejeon 34134, Republic of Korea

Correspondence to:E-mail: yjyu@cnu.ac.kr

Received: September 2, 2020; Revised: September 20, 2020; Accepted: October 10, 2020


In this work, we investigated the variation in surface conditions of graphene by employing atomic force microscopy and optical images. We inspected the resistance and doping at selected areas of graphene by transport measurements. Especially, the area with a dominant contribution from the edges, which have more disorders and poly (methyl methacrylate) residues compared to the central surface of graphene, showed large resistance as well as large doping concentration. Our study facilitated the understanding of the electric conditions on graphene surface and edge areas.

Keywords: Graphene, Carrier density, Resistance, Transport characterization

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