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Research Paper

Applied Science and Convergence Technology 2021; 30(6): 176-182

Published online November 30, 2021


Copyright © The Korean Vacuum Society.

Characterization of SiO2 Over Poly-Si Mask Etching in Ar/C4F8 Capacitively Coupled Plasma

In Ho Seonga , Jang Jae Leea , Chul Hee Choa , Yeong Seok Leea , Si Jun Kimb , and Shin Jae Youa , c , ∗

aDepartment of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
bNanotech Optoelectronics Research Center, Yongin 16882, Republic of Korea
cInstitute of Quantum Systems (IQS), Chungam National University, Daejeon 34134, Republic of Korea

Correspondence to:E-mail: sjyou@cnu.ac.kr

Received: November 5, 2021; Revised: November 29, 2021; Accepted: November 29, 2021

This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.


This research involved an experimental investigation of the relationship between the plasma parameters and etching properties of SiO2 over poly-Si mask in Ar/C4F8 capacitively coupled plasma (CCP). In these experiments, the etching process was conducted in CCP and the external conditions such as the applied power, pressure, and gas ratio were varied. In addition, the density of radicals, which dominantly participate in surface reactions, the electron density, and the self-bias voltage were measured. As a result, deposition of the CFx polymer film on the poly-Si mask lowered the electron density and self-bias voltage and the etch rate of the target and the mask increased as the internal parameters of the plasma increased. This result indicated that the electron density and the self-bias voltage, which represent the physical etch elements of ion flux and energy, respectively, have a marked influence on the etching process. Consequently, our work led us to propose a critical value, which is the product of the electron density and self-bias voltage, neVbias, to analyze the etching mechanism. Our results are also expected to serve as a basic processing database that enables an in-depth understanding of etching.

Keywords: Etching, Fluorocarbon, Ion energy, Ion flux, Plasma

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