Electrical conductivity (σ) indicates the efficiency of current flow through electronic materials, and varies with both carrier density (n2D) and mobility (µ). Studying the temperature-dependent σ of a material allows for the elucidation of various carrier transport mechanisms such as metal-insulator phase transition, Coulomb impurity scattering, metal-semiconductor barrier, and quantum tunneling features. Herein, we report a considerable interlayer resistance (RIT) effects on the carrier scattering mechanism occurring in a multilayer rhenium disulfide (ReS2) transistor, particularly at high temperatures. At room temperature (T = 300 K), a channel centroid gradually migrates from the bottom to the top surface of ReS2 multilayers by contributing to the suppressed RIT with increasing electrostatic drain (VD) and gate (VG) bias conditions. Meanwhile, for temperatures above 380 K, the effective interlayer resistance quickly decreases with increasing VG, and the ReS2 multilayer consequently demonstrates an anomalous carrier mobility enhancement. For a better insight into the charge scattering mechanism, the obtained temperature-dependent carrier mobility was further analyzed by employing Matthiessen’s rule for Coulomb impurity scattering, phonon scattering, and interlayer resistance scattering, respectively. Our study would shed light on deep understanding for the high temperature carrier scattering mechanism and further improvements in diverse optoelectronic applications of ReS2 multilayers.
Keywords: Multilayers, Channel migration, Charge scattering mechanism, Interlayer resistance, Carrier mobility