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Research Paper

Applied Science and Convergence Technology 2022; 31(4): 85-88

Published online July 30, 2022


Copyright © The Korean Vacuum Society.

High Temperature Carrier Scattering Mechanisms in Multilayer ReS2 Field-Effect Transistors

Minji Chaea , † , Sooyeon Kima , † , Yeongseo Hana , Dahyun Choia , Yoojin Choia , Hyejin Kima , and Min-Kyu Jooa , b , *

aDepartment of Applied Physics, Sookmyung Women’s University, Seoul 04310, Republic of Korea
bInstitute of Advanced Materials and Systems, Sookmyung Women’s University, Seoul 04310, Republic of Korea

Correspondence to:mkjoo@sookmyung.ac.kr

These authors contributed equally to this work.

Received: June 17, 2022; Revised: July 13, 2022; Accepted: July 18, 2022


Electrical conductivity (σ) indicates the efficiency of current flow through electronic materials, and varies with both carrier density (n2D) and mobility (µ). Studying the temperature-dependent σ of a material allows for the elucidation of various carrier transport mechanisms such as metal-insulator phase transition, Coulomb impurity scattering, metal-semiconductor barrier, and quantum tunneling features. Herein, we report a considerable interlayer resistance (RIT) effects on the carrier scattering mechanism occurring in a multilayer rhenium disulfide (ReS2) transistor, particularly at high temperatures. At room temperature (T = 300 K), a channel centroid gradually migrates from the bottom to the top surface of ReS2 multilayers by contributing to the suppressed RIT with increasing electrostatic drain (VD) and gate (VG) bias conditions. Meanwhile, for temperatures above 380 K, the effective interlayer resistance quickly decreases with increasing VG, and the ReS2 multilayer consequently demonstrates an anomalous carrier mobility enhancement. For a better insight into the charge scattering mechanism, the obtained temperature-dependent carrier mobility was further analyzed by employing Matthiessen’s rule for Coulomb impurity scattering, phonon scattering, and interlayer resistance scattering, respectively. Our study would shed light on deep understanding for the high temperature carrier scattering mechanism and further improvements in diverse optoelectronic applications of ReS2 multilayers.

Keywords: Multilayers, Channel migration, Charge scattering mechanism, Interlayer resistance, Carrier mobility

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