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Applied Science and Convergence Technology 2022; 31(5): 110-112
Published online September 30, 2022
https://doi.org/10.5757/ASCT.2022.31.5.110
Copyright © The Korean Vacuum Society.
Electron Tunneling Enhancement in MoS2/Hexagonal Boron Nitride/Multilayer Graphene Heterostructures by Bubble Formation
Oh Hun Gwona 
, Seo Gyun Janga , Jong Yun Kimb , Han Seul Kimc , and Young-Jun Yua , b , ∗
aDepartment of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
bInstitute of Quantum Systems, Chungnam National University, Daejeon 34134, Republic of Korea
cCenter for Supercomputing Applications, National Institute of Supercomputing and Networking, Korea Institute of Science and Technology Information, Daejeon 34141, Republic of Korea
Correspondence to:yjyu@cnu.ac.kr
Unintentional bubbles are formed when manufacturing devices using two-dimensional materials. Usually, these bubbles affect device performance degradation, but in the case of memory devices, an additional charge trap can be expected. We investigate the direct surface potential of bubbles formed in a hexagonal boron nitride (hBN)/multilayer graphene (MLG) heterostructure. Specifically, we study the electron transfer improvement by increasing the memory window of a MoS2/hBN/MLG heterostructure in floating gate memory owing to bubbles formed at the hBN/MLG heterointerface. This characterization of bubbles containing molecules such as water or hydrocarbon in two-dimensional material heterointerfaces can promote the understanding of charge carrier tunneling in two-dimensional material heterostructures.
Keywords: Heterostructure, Floating Gate Memory, Memory Window, Bubble
