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Research Paper

Applied Science and Convergence Technology 2022; 31(6): 141-144

Published online November 30, 2022


Copyright © The Korean Vacuum Society.

Structural and Optical Properties of InN Nanowires Formed on Si(111)

Jaehyeok Shina , Siyun Noha , Jinseong Leea , Jaewon Ohb , Mee-Yi Ryub , and Jin Soo Kima , *

aDepartment of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea
bDepartment of Physics, Kangwon National University, Chuncheon 24341, Republic of Korea

Correspondence to:kjinsoo@jbnu.ac.kr

Received: August 4, 2022; Revised: October 20, 2022; Accepted: October 22, 2022


We report the structural and optical properties of InN nanowires (NWs) formed on p-type Si(111) substrates using a plasma-assisted molecular-beam epitaxy. The InN NWs were formed on a Si(111) substrate using a new growth method, the indium (In) pre-deposition (InPD) method, in which In droplets are initially formed by supplying only In flux to the substrate, where they work as nucleation sites for the formation of subsequent InN NWs. Field-emission scanning-electron microscopy images show that the InN NWs have symmetric shapes along the vertical direction. In addition, most of the InN NWs were unidirectionally grown in the direction perpendicular to the substrate. Strong and narrow peaks corresponding to InN(0002) can be clearly observed in the double crystal X-ray diffraction rocking curves of the NW samples. In the transmission electron microscopy images of the InN NWs, stacking faults, typically observed in Si-based III-nitride semiconductors, are rarely observed. A strong free-exciton peak was observed from the InN NWs at the wavelength of 1297 nm with a narrow linewidth at room temperature. Structural and optical characterizations of the NW samples indicate that highly crystalline InN NWs were formed on Si(111) using the new InPD growth method.

Keywords: Plasma-assisted molecular-beam epitaxy, InN nanowires, Si, In pre-deposition method, High crystallinity

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