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Research Paper

Applied Science and Convergence Technology 2022; 31(6): 145-148

Published online November 30, 2022


Copyright © The Korean Vacuum Society.

Tin Oxide Field-Effect Transistors Deposited by Thermal Atomic Layer Deposition with H2O Reactant

Chanhyeok Park , Seonchang Kim , Gyeong Ryul Lee , and Roy Byung Kyu Chung*

Electronic Materials Science and Engineering, Kyungpook National University, Daegu 41566, Republic of Korea

Correspondence to:roy.b.chung@knu.ac.kr
These authors contributed equally to this work.

Received: October 12, 2022; Revised: October 25, 2022; Accepted: October 28, 2022


In this work, SnO2-based field-effect transistors were fabricated and characterized. SnO2 channel (Thickness = 6.5 or 9.0 nm) was deposited by thermal atomic layer deposition (T-ALD) with H2O as reactant. The conductivity of the channel layer was tuned by a post-annealing process, with annealing temperature limited to 400 ∘C. When the channel thickness was 9 nm, the channel could not be properly modulated due to high intrinsic carrier concentration. On the other hand, a 6.5-nm thick SnO2 channel exhibited excellent device characteristics in general, including clear channel pinch-off and current on/off ratio higher than 104. Increasing the annealing duration from 1 to 2 hours led to higher channel conductivity and transconductance, such that the drain current increased by a factor of 2.5 at the given gate and drain biases. On average, the field-effect mobility increased from 110 to 125 cm2/Vs, and the subthreshold swing decreased from 4 to 2 V/dec. This work demonstrates that SnO2 deposited by T-ALD can be an attractive channel material for back-end-of-line compatible transistors, which are crucial for hyper-scaling of current Si technology.

Keywords: SnO2, Field-effect transistors, Back-end-of-line compatible transistor, Atomic layer deposition

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