Applied Science and Convergence Technology 2023; 32(1): 26-29
Published online January 30, 2023
Copyright © The Korean Vacuum Society.
Seungjin Leea , Soo Ho Choia , b , Hayoung Koa , Soo Min Kimc∗ , and Ki Kang Kima , b∗
aDepartment of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
bCenter for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
cDepartment of Chemistry, Sookmyoung Women’s University, Seoul 14072, Republic of Korea
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This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License(http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Wafer-scale single-crystal (SC) graphene film is highly required for industrial applications including electronic, photonic, and optoelectronic devices. While SC graphene film has been successfully synthesized on SC Cu (111) or H-Ge (110) substrates, preparation methods of SC growth substrate are still not practical. Here, we report the facile synthesis of wafer-scale SC graphene film on atomic sawtooth Cu substrate by means of chemical vapor deposition. Atomic sawtooth Cu substrates are prepared by melting Cu foils on W foils and solidifying them. The substrates are subsequently employed for synthesis of SC graphene without formation of grain boundaries. The electron diffraction patterns, visualized by transmission electron microscopy, reveal that graphene film has the same lattice orientation over the whole region. Furthermore, Raman mapping measurement demonstrates the homogeneity of the optical property of SC graphene films. Our method provides a new route for the synthesis of SC graphene, as well as other two-dimensional materials.
Keywords: Two-dimensional materials, Graphene, Chemical vapor deposition, Atomic sawtooth Cu, Single-crystal