Applied Science and Convergence Technology 2023; 32(2): 41-44
Published online March 30, 2023
Copyright © The Korean Vacuum Society.
aDepartment of Applied Physics, Sookmyung Women’s University, Seoul 04310, Republic of Korea
bInstitute of Advanced Materials and Systems, Sookmyung Women’s University, Seoul 04310, Republic of Korea
This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License(http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Absolute Hall-effect sensitivity (SA) and minimum magnetic resolution (Bmin) of two-dimensional (2D) van der Waals Hall elements are predicted without magnetic fields by considering the drain voltage-dependent transconductance and current power spectrum density (PSD). The measured drain-bias-dependent PSD of rhenium disulfide multilayers is suitably described by the carrier number fluctuation noise model, indicating that the effects of carrier trapping/de-trapping into oxide traps dominate the observed current variations. To achieve high currentnormalized Hall sensitivity and SA with a low Bmin at a specific current value, the contact resistance and oxide trap density should be further optimized. Our discussion provides an effective approach for the optimization of 2D multilayer-based Hall elements.
Keywords: Two-dimensional materials, Hall sensor, Magnetic resolution, Analytical model, Contact resistance, Carrier mobility