Prediction of Absolute Hall Effect Sensitivity and Minimum Magnetic Resolution for Two-Dimensional Rhenium Disulfide Multilayer Magnetic Sensors without Magnetic Fields

Min-Kyu Joo

doi:10.5757/ASCT.2023.32.2.41

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Research Paper

Applied Science and Convergence Technology 2023; 32(2): 41-44

Published online March 30, 2023

https://doi.org/10.5757/ASCT.2023.32.2.41

Prediction of Absolute Hall Effect Sensitivity and Minimum Magnetic Resolution for Two-Dimensional Rhenium Disulfide Multilayer Magnetic Sensors without Magnetic Fields

Min-Kyu Joo^{a , b , ∗}

^aDepartment of Applied Physics, Sookmyung Women’s University, Seoul 04310, Republic of Korea
^bInstitute of Advanced Materials and Systems, Sookmyung Women’s University, Seoul 04310, Republic of Korea

Correspondence to:mkjoo@sookmyung.ac.kr

Received: February 20, 2023; Revised: March 15, 2023; Accepted: March 15, 2023

This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License(http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

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Abstract

Absolute Hall-effect sensitivity (S_A) and minimum magnetic resolution (B_min) of two-dimensional (2D) van der Waals Hall elements are predicted without magnetic fields by considering the drain voltage-dependent transconductance and current power spectrum density (PSD). The measured drain-bias-dependent PSD of rhenium disulfide multilayers is suitably described by the carrier number fluctuation noise model, indicating that the effects of carrier trapping/de-trapping into oxide traps dominate the observed current variations. To achieve high currentnormalized Hall sensitivity and S_A with a low B_min at a specific current value, the contact resistance and oxide trap density should be further optimized. Our discussion provides an effective approach for the optimization of 2D multilayer-based Hall elements.

Keywords: Two-dimensional materials, Hall sensor, Magnetic resolution, Analytical model, Contact resistance, Carrier mobility