Tuning Coupling Behavior of WS2/WSe2/WS2 Trilayer Van Der Waals Heterostructures

Hyojung Kim; Bora Kim; Hye Min Oh

doi:10.5757/ASCT.2023.32.6.165

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Applied Science and Convergence Technology 2023; 32(6): 165-167

Published online November 30, 2023

https://doi.org/10.5757/ASCT.2023.32.6.165

Tuning Coupling Behavior of WS₂/WSe₂/WS₂ Trilayer Van Der Waals Heterostructures

Hyojung Kim^{a , †} , Bora Kim^{b , †} , and Hye Min Oh^{c , *}

^aThe Institute of Basic Science, Kunsan National University, Gunsan 54150, Republic of Korea
^bDepartment of Physics, Hanyang University, Seoul 04763, Republic of Korea
^cDepartment of Physics, Kunsan National University, Gunsan 54150, Republic of Korea

Correspondence to:ohmin@kunsan.ac.kr

†These authors equally to this work.

Received: November 10, 2023; Revised: November 20, 2023; Accepted: November 21, 2023

This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (https://creativecommons.org/licenses/by-nc-nd/4.0/) which permits non-commercial use, distribution and reproduction in any medium without alteration, provided that the original work is properly cited.

Abstract

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Abstract

Van der Waals (vdW) heterostructures, composed of stacked transition metal dichalcogenides (TMDCs), are promising components for the advancement of state-of-the-art optoelectronic devices. Therefore, understanding and controlling interactions within these layered structures are essential. In this study, we fabricated a trilayer configuration consisting of stacked WS₂/WSe₂/WS₂ and investigated the impact of annealing on the interlayer coupling. This structure, featuring a type-II band alignment, enables charge transfer between TMDC layers. The modulation of the WS₂/WSe₂/WS₂ trilayer structure was confirmed using photoluminescence (PL) and Raman spectroscopy. Abnormal PL enhancement and quenching, as well as notable Raman peak shifts, demonstrate the essential role of annealing in controlling the carrier dynamics in vdW heterostructures.

Keywords: Van der Waals heterostructures, Transition metal dichalcogenides, Interlayer coupling, Photoluminescence, Raman spectroscopy