Applied Science and Convergence Technology 2024; 33(1): 7-12
Published online January 30, 2024
Copyright © The Korean Vacuum Society.
Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea
†These authors equally contributed to this work.
This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (https://creativecommons.org/licenses/by-nc-nd/4.0/) which permits non-commercial use, distribution and reproduction in any medium without alteration, provided that the original work is properly cited.
This study investigated the variations in the structural and electrical characteristics of graphene under different O2 plasma treatment conditions and durations, employing Raman spectroscopy and Id−Vg and Id−Vd measurements. Initially, we examined the Raman spectra and the Id−Vg and Id−Vd curves of graphene following remote O2 plasma treatments ranging from 1 to 4 s. We observed the p-doping effects on the electrical properties of graphene. Subsequently, we transitioned to a reactive ion etching plasma treatment mode, followed by a comparative analysis to determine the most suitable plasma mode for enhancing the graphene properties without compromising its bonding network integrity. Notably, a shift in the Raman peak positions and intensities owing to the plasma treatment duration revealed that the high-energy plasma ions disrupted the symmetry of sp2 orbital bonds of graphene, leading to the formation of sp3 hybridization orbital bonds. Furthermore, we confirmed the restorative effects of the heat treatment by observing changes in the electrical characteristics when the plasma-treated graphene was annealed in a furnace.
Keywords: Two-dimensional material, Graphene, Transfer process, O2 plasma, Raman spectroscopy, Electrical properties, Dirac point, p-type doping