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Applied Science and Convergence Technology 2024; 33(3): 76-79
Published online May 30, 2024
https://doi.org/10.5757/ASCT.2024.33.3.76
Copyright © The Korean Vacuum Society.
A Study Using Crystal Transport of Ions in Matter When Boron Ion is Implanted into a Tungsten Trioxide Thin Film
You Kyoung Park and Sang Wan Cho* 
Department of Physics, Yonsei University, Wonju 26493, Republic of Korea
Correspondence to:dio8027@yonsei.ac.kr
This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (https://creativecommons.org/licenses/by-nc-nd/4.0/) which permits non-commercial use, distribution and reproduction in any medium without alteration, provided that the original work is properly cited.
Recently, numerous thin-film doping methods, such as solar cells, have been employed to improve semiconductor efficiency. Simulations of boron ion (B-ion) implantation using crystal transport of ions in matter obtained the depth profile. To obtain the result of hole concentration using the hole concentration program as the depth profile, a phenomenon caused by B-ions implantation into Si can be expected. The hole concentration also decreased as the dose that penetrated profoundly decreased, owing to the tungsten trioxide thin films (WO3-TF). Therefore, the dose optimized for the thickness of the WO3-TF and the initial ion implantation energy can be predicted using the two programs. In addition, using hole concentration data, it was possible to determine the depth at which the electrical conductivity appeared.
Keywords: Ultrahigh dose, Boron ion, Tungsten trioxide thin film, Crystal transport of ions in matter, Hole concentration
