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Research Paper

Applied Science and Convergence Technology 2024; 33(4): 104-107

Published online July 30, 2024

https://doi.org/10.5757/ASCT.2024.33.4.104

Copyright © The Korean Vacuum Society.

Resistive Switching in Silver Iodide with Multi-Layer Graphene Electrodes

Beomkyu Shina , † , Yeonwoo Choib , † , Jong Yun Kimc , ∗ , Ji-Hyun Chab , ∗ , and Young-Jun Yua , c

aDepartment of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
bDepartment of Chemistry, Chungnam National University, Daejeon 34134, Republic of Korea
cInstitute of Quantum Systems, Chungnam National University, Daejeon 34134, Republic of Korea

Correspondence to:kjy2018@cnu.ac.kr, jcha@cnu.ac.kr

These authors equally contributed to this work.

Received: July 23, 2024; Revised: July 26, 2024; Accepted: July 26, 2024

This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (https://creativecommons.org/licenses/by-nc-nd/4.0/) which permits non-commercial use, distribution and reproduction in any medium without alteration, provided that the original work is properly cited.

Abstract

Memristors based on silver iodide (AgI), a solid-state electrolyte, with resistive switching are favored in artificial neural networks. In this study, high light transmittance of AgI was confirmed through the iodization of Ag using a vapor-phase iodization method. In addition, using transparent multi-layered graphene (MLG) as the electrode, an MLG/AgI/MLG structure was fabricated, with observations of its resistive memory switching and threshold switching characteristics measured to assess the possibility of application in a memory device and a selector, respectively. The findings here present the possibility of the use of AgI in highly transparent electronic devices for multiple uses.

Keywords: Silver iodide, Graphene, Resistive switching

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