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Review Paper | 2024-01-30

Atomic Layer Etching of SiO2 for Nanoscale Semiconductor Devices: A Review

  • Daeun Hong, Yongjae Kim, and Heeyeop Chae
  • aSchool of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
    bSKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
    cDepartment of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
ASCT 2024; 33(1): 1-6
Research Paper | 2024-01-30

Investigating the Impact of Oxygen Surface Plasma Treatments on the Structural and Electrical Properties of Graphene

  • Wonseop Lee, Seongho Kim, Taehwan Lee et al.
  • Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea
ASCT 2024; 33(1): 7-12
Research Paper | 2024-01-30

Study on the Value-Added Carbon Products from Methane Pyrolysis with the Thermal Plasma Process

  • Hyeokjun Kang, Jeong-Hwan Oh, Yong Hee Lee et al.
  • aFaculty of Applied Energy System, Jeju National University, Jeju, 63243, Republic of Korea
    bElectric Energy Research Center, Jeju National University, Jeju 63243, Republic of Korea
    cDepartment of Nuclear and Energy Engineering, Jeju National University, Jeju 63243, Republic of Korea
ASCT 2024; 33(1): 13-17
Research Paper | 2024-01-30

Uniformity and Thickness Control of MoS2 During Thermolysis

  • Gyeong Ryul Lee, Cheolho Yang, and Roy Byung Kyu Chung
  • School of Materials Science and Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
ASCT 2024; 33(1): 18-22
Research Paper | 2024-01-30

Effect of δ-CsPbI3 Phase Separation in CsxFA1−xPbI3 under Ambient Conditions

  • Muntae Hwang, Jaewon Oh, Hyunbok Lee et al.
  • kangwon national universityDepartment of Physics and Institute of Quantum Convergence Technology, Kangwon National University, Chuncheon 24341, Republic of Korea
ASCT 2024; 33(1): 23-26
Research Paper | 2024-01-30

Etch Damage of SiOC Thin Films in an Inductively Coupled Plasma Using Low-Frequency

  • Jinhyuk Kim, Gilyoung Choi, and Daekug Lee
  • aDepartment of Control and Instrumentation Engineering, Korea University, Sejong 30019, Republic of Korea
    bDepartment of Computer and Information Science, Korea University, Sejong 30019, Republic of Korea
ASCT 2024; 33(1): 27-31
Brief Report | 2024-01-30

Characteristics of a Plasmonic Color Filter Using Simple Focused Ion Beam Process

  • Taehun Kim, Byungwoo Lee, and Ha Sul Kim
  • aNational Forensic Service, Wonju 26460, Republic of Korea
    bDepartment of Physics, Chonnam National University, Kwangju 61748, Republic of Korea
ASCT 2024; 33(1): 32-35

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Journal information

January, 2024, Vol.33 No 1

Most Cited more +

Micro-Electromechanical Systems-based Sensors and Their Applications

Sophia Nazir and Oh Seok Kwon

ASCT 2022; 31(2): 40-45

Photoelectrochemical Water Splitting using GaN Nanowires with Reverse-Mesa Structures as Photoanode Material

Siyun Noh, Sangmoon Han, Jaehyeok Shin, Jinseong Lee, Ilgyu Choi, Hye Min Oh, Mee-Yi Ryu, and Jin Soo Kim

ASCT 2022; 31(2): 51-55

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Aims and Scope

Applied Science and Convergence Technology (Appl. Sci. Converg. Technol., ASCT; e-ISSN 2288-6559) is a bimonthly published international peer-reviewed online journal. It aims to enhance the knowledge of applied science and technologies and vacuum by providing the researchers with easily accessible research information via the web.
ASCT is concerned not only at scientists and researchers in the fields it covers but also at those in other fields who are interested in the following fields.

  • Vacuum and Space Technology
  • Surface and Interface Science
  • Semiconductors and Thin Films
  • Plasma
  • Nano/Bio and Data Science
  • Sustainability and Energy
  • Photonics/Quantum and Display

Previous Issues

  • Recent Advances in Photonic Polymerase Chain Reaction Processes with Functionalized Nanomaterials

  • Review of Generative Models for the Inverse Design of Nanophotonic Metasurfaces

  • Electroluminescent MgZnO/ZnO Heterojunction Diode

  • High Current Operation in Type-II InP/GaAsSb/InGaAs Double Heterojunction Phototransistors

More Previous Issues